PZTA42
下载次数：311发布日期：2011-04-21
Philips Semiconductors Product specification
NPN high-voltage transistor PZTA42
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT223 plastic package.
PNP complement: PZTA92.
PINNING
PIN DESCRIPTION
1 base
2,4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage 4
123
MAM287 Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 300 V
VCEO collector-emitter voltage open base − 300 V
VEBO emitter-base voltage open collector − 6V
IC collector current (DC) − 100 mA
ICM peak collector current − 200 mA
IBM peak base current − 100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.2 W
Tstg storage temperature −65 +150 °C
Tj
junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
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