PZTA14
下载次数：386发布日期：2011-04-21
1999 Apr 14 2
Philips Semiconductors Product specification
NPN Darlington transistor PZTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• Pre-amplifiers requiring high input impedance.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complement: PZTA64.
PINNING
PIN DESCRIPTION
1 base/input
2, 4 collector/output
3 emitter/ground
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
13 2
4
MAM319
TR2
2, 4
3
Top view
1
TR1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 30 V
VCES collector-emitter voltage VBE =0 − 30 V
VEBO emitter-base voltage open collector − 10 V
IC collector current (DC) − 500 mA
ICM peak collector current − 800 mA
IB base current (DC) − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.25 W
Tstg storage temperature −65 +150 °C
Tj
junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
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