PZ1418B30U

Philips Semiconductors Product specification NPN microwave power transistor PZ1418B30U FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and easy broadband use. APPLICATIONS • Common base class-B broadband amplifiers under CW conditions in military and professional applications. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. PINNING - SOT443A PIN DESCRIPTION 1 collector 2 emitter 3 base; connected to flange Fig.1 Simplified outline and symbol. handbook, halfpage MAM314 1 2 3 Top view e c b QUICK REFERENCE DATA RF performance up to Tmb =25 °C in a common base class-B wideband amplifier. f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.4 to 1.8 28 ≥27 ≥7.3 ≥38 see Figs 6 and 7 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

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