RX1214B300Y

Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output matching networks for an easy circuit design. APPLICATIONS • Common base class-C wideband amplifiers operating under pulsed conditions, recommended for L-band radar applications. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange. PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange Fig.1 Simplified outline and symbol. olumns e c b MAM045 1 2 Top view 3 3 QUICK REFERENCE DATA Microwave performance at Tmb ≤ 25 °C in a common base class-C wideband amplifier. MODE OF OPERATION f (GHz) VCC (V) PL (W) GP (dB) ηC (%) Zi; ZL (Ω) Class-C tp = 150 µs; δ =5% 1.2 to 1.4 50 ≥250 ≥7 ≥35 see Fig 6 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

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